Tower Semiconductor Ltd has announced the launch of its latest generation BCD technology, which is part of its Gen3 power management platform. This new technology delivers industry-leading LDMOS performance tailored for high-current applications.
The Gen3 platform has been specifically designed to meet the rapidly increasing power demands associated with AI data centres, as well as advanced mobile PMIC and charger applications. Tower Semiconductor is set to showcase this innovative technology at the APEC 2026 conference, scheduled for March 23-25, 2026, at the Henry B. Gonzalez Convention Center in San Antonio, Texas, where they will be located at booth #1455.
Tower’s Gen3 LDMOS technology effectively addresses the challenges presented by escalating power requirements by enabling higher efficiency power delivery. This advancement results in reduced heat generation and enhances overall system performance. Additionally, the platform facilitates significant reductions in die size for power management chips that contain large power transistor components.
The technology is particularly aimed at applications involving Monolithic Smart Power Stage and DrMOS, a market valued at approximately $2.5 billion, which is anticipated to grow to over $4.7 billion by 2031, according to insights from Mordor Intelligence.
Included in this newly released technology is a range of power devices meticulously developed to accommodate the demands of both lateral and vertical power delivery for AI processors. These devices feature ultra-low switching and conduction losses, which are crucial for optimising efficiency.
By integrating its established leadership in silicon photonics within AI data centres with advanced power management capabilities, Tower Semiconductor is broadening its role in AI infrastructure. This expansion moves from optical interconnects to the efficient power delivery of AI processors.